Led by the Fifth Institute of Electronics of the Ministry of Industry and Information Technology, the group standard T/CASAS 015-2022 "Power Cycling of Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors (SiC MOSFETs)" and T/CASAS 016-2022 "Power Cycling of Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors (SiC MOSFETs)" were officially launched on July 18, 2022, following the standard development process of CASAS. Test Method" and "T/CASAS 016-2022 "Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFET) Junction Thermal Resistance Transient Dual Interface Test Method" were officially released for industry on July 18, 2022.
The two standards were initiated by the Fifth Institute of Electronics of the Ministry of Industry and Information Technology, Xi'an Jiaotong University, Southern Power Grid Science and Research Institute Limited, BYD Semiconductor Corporation, State Grid Smart Grid Research Institute Limited, and the 55th Research Institute of China Electronics Technology Group in December 2020 and formally established in April 2021.
T/CASAS 015-2022 "Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFET) Power Cycle Test Method" specifies the silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET) power cycle test method to evaluate whether the device meets the specified cycle under the conditions of the specified stress times. It is important to improve the technical capability of reliability evaluation and analysis of SiC MOSFET devices and to support the reliability improvement of SiC MOSFET devices.
【Main Drafting Unit】
The Fifth Research Institute of Electronics, Ministry of Industry and Information Technology, Jiangsu Hongwei Technology Co. Ltd., the 8th Research Institute of China Aerospace Science and Technology Corporation, the Southern Power Grid Research Institute, Xi'an Jiaotong University, Dongguan Southern Semiconductor Technology Co.
【Main drafters】
Chen Yuan, He Zhiyuan, Lai Ping, Lu Guoguang, Yao Tianbao, Li Jinyuan, Li Yaosheng, Xie Feng, Adult Bin, Chen Yiqiang, Huang Yun, Liu Ao, Liu Chang, Xu Xinbing, Wu Haiping, Tang Honghao, Liu Weixin, Li Weiwei, Wang Laili, Qiao Liang, Xu Ruipeng.
T/CASAS 016-2022 "Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFET) Junction Case Thermal Resistance Transient Dual Interface Test Method" specifies the Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFET) Junction Case Thermal Resistance Transient Dual Interface Test Method for SiC MOSFET discrete Device, the voltage Vsd between the source and drain as a test temperature-sensitive parameters of the junction case thermal resistance test.
【Main drafting unit】
The Fifth Research Institute of Electronics of the Ministry of Industry and Information Technology, the 55th Research Institute of China Electronics Technology Group, the Southern Power Grid Scientific Research Institute, the State Grid Smart Grid Research Institute, Xi'an Jiaotong University, Southeast University, Shandong University, Nanjing University of Aeronautics and Astronautics, Shenzhen Basic Semiconductor Co. Alliance.
Main drafters】
Fu Zhiwei, Hou Bo, Zhou Bin, Chen Si, Yang Xiaofeng, Chen Yiqiang, Chen Yuan, Lai Ping, Huang Yun, Lu Guoguang, Liu Ao, Guo Huaixin, Li Weiwei, Li Jinyuan, Li Yaosheng, Wang Laili, Liu Suyang, Yang Jiayue, Cui Yijun, Tang Honghao, Qiao Liang, Xu Ruipeng.
The Fifth Institute of Electronics of the Ministry of Industry and Information Technology (China Saibao Laboratory), also known as China Institute of Electronic Product Reliability and Environmental Testing, was established in 1955 and is the first authoritative institution engaged in reliability research in China.
The laboratory can provide technical services such as certification and measurement, testing, analysis and evaluation, data service, software evaluation, information security, technical training, standard information, engineering supervision, energy saving and environmental protection, special equipment and special software research and development, from materials to complete equipment, from hardware to software to large complex systems. The laboratory has a number of certification and testing qualifications and authorizations, and has established good international cooperation and mutual recognition, so that it can carry out certification and testing business in the world and represent China in international technical exchanges, standards and regulations. At the same time, as a direct unit of the Ministry of Industry and Information Technology, it provides technical support for the Ministry's industry management and local governments, and provides technical support and services for electronic information enterprises, serving more than 10,000 enterprises every year.
l The earliest authoritative institution engaged in reliability research in China
l An industry support service unit directly under the Ministry of Industry and Information Technology
l Independent laboratory with many domestic and international accreditation qualifications
l Professional quality and reliability common technology services
----- Article retrieved from CASA -----